? semiconductor components industries, llc, 2012 september, 2012 ? rev. 0 1 publication order number: ngtb30n120ihsw/d NGTB30N120IHSWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on ? state voltage and minimal switching loss. the igbt is well suited for resonant or soft switching applications. incorporated into the device is a rugged co ? packaged free wheeling diode with a low forward voltage. features ? low saturation voltage using trench with field stop technology ? low switching loss reduces system power dissipation ? optimized for low case temperature in ih cooker application ? low gate charge ? these are pb ? free devices typical applications ? inductive heating ? consumer appliances ? soft switching absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 60 30 a pulsed collector current, t pulse limited by t jmax i cm 200 a diode forward current @ t c = 25 c @ t c = 100 c i f 60 30 a diode pulsed current, t pulse limited by t jmax i fm 200 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 192 77 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 30 a, 1200 v v cesat = 2.00 v e off = 1.0 mj e device package shipping ordering information NGTB30N120IHSWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 30n120ihs aywwg g e c
NGTB30N120IHSWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.65 c/w thermal resistance junction ? to ? case, for diode r jc 2.0 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 150 c v cesat ? ? 2.0 2.6 2.4 ? v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 150 c i ces ? ? ? ? 0.5 2.0 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 5300 ? pf output capacitance c oes ? 125 ? reverse transfer capacitance c res ? 95 ? gate charge total v ce = 600 v, i c = 30 a, v ge = 15 v q g ? 220 ? nc gate to emitter charge q ge ? 42 ? gate to collector charge q gc ? 95 ? switching characteristic, inductive load turn ? off delay time t j = 25 c v cc = 600 v, i c = 30 a r g = 10 v ge = 0 v/ 15v t d(off) ? 210 ? ns fall time t f ? 140 ? turn ? off switching loss e off ? 1.0 ? mj turn ? off delay time t j = 125 c v cc = 600 v, i c = 30 a r g = 10 v ge = 0 v/ 15v t d(off) ? 215 ? ns fall time t f ? 175 ? turn ? off switching loss e off ? 1.8 ? mj diode characteristic forward voltage v ge = 0 v, i f = 30 a v ge = 0 v, i f = 30 a, t j = 150 c v f ? ? 1.8 2.0 2.0 ? v
NGTB30N120IHSWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 240 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 12 4 0 250 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature v ce , collector ? emitter voltage (v) ? 50 200 180 100 60 40 20 0 10000 i c , collector current (a) i c , collector current (a) v ce , collector ? emitter voltage (v) capacitance (pf) v ge = 20 to 13 v t j = 25 c 10 v 9 v 8 v 7 v 240 i c , collector current (a) v ge = 20 to 15 v t j = 150 c 11 v 8 v 7 v 280 i c , collector current (a) v ge = 20 to 13 v t j = ? 40 c 9 v 8 v t j = 25 c t j = 150 c 10 v 7 v c ies c oes c res 8 4 11 v 200 160 120 80 40 0 678 9 v 10 v 11 v 200 160 120 80 40 0 5 4 3 2 1 0678 240 200 160 120 80 40 0 5 4 3 2 1 0678 16 200 150 100 50 0 3 2 1 0 ? 20 10 40 70 100 130 160 i c = 60 a i c = 30 a i c = 10 a i c = 5 a 1000 100 10 80 160 140 120
NGTB30N120IHSWG http://onsemi.com 4 typical characteristics figure 7. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 120 i f , forward current (a) t j = 25 c t j = 150 c figure 8. typical gate charge q g , gate charge (nc) 50 0 20 v ge , gate ? emitter voltage (v) v ce = 600 v 250 100 80 60 40 20 0 3.5 4.0 4.5 5.0 15 10 5 0 100 150 200 figure 9. energy loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 2.5 e off , turn ? off switching loss (mj) 160 v ce = 600 v v ge = 15 v i c = 30 a rg = 10 2 1.5 1 0.5 0 figure 10. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 1 10 100 1000 switching time (ns) 160 v ce = 600 v v ge = 15 v i c = 30 a rg = 10 t f t d(off) figure 11. energy loss vs. i c i c , collector current (a) 26 20 14 8 4.5 e off , turn ? off switching loss (mj) 32 38 v ce = 600 v v ge = 15 v t j = 150 c rg = 10 56 62 50 44 4 3.5 3 2.5 2 1.5 1 0.5 0 figure 12. switching time vs. i c i c , collector current (a) 1 10 100 1000 switching time (ns) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 t f t d(off) 26 20 14 832385662 50 44
NGTB30N120IHSWG http://onsemi.com 5 typical characteristics figure 13. energy loss vs. rg rg, gate resistor ( ) 75 65 55 45 35 25 15 5 3.2 e off , turn ? off switching loss (mj) v ce = 600 v v ge = 15 v i c = 30 a t j = 150 c 85 2.8 2.4 2 1.6 1.2 0.8 0.4 0 figure 14. switching time vs. rg rg, gate resistor ( ) 75 65 55 45 35 25 15 5 10 100 1000 switching time (ns) 85 t f t d(off) v ce = 600 v v ge = 15 v i c = 30 a t j = 150 c 10000 1 figure 15. energy loss vs. v ce v ce , collector ? emitter voltage (v) 725 675 625 575 525 475 425 375 2.8 e off , turn ? off switching loss (mj) 775 v ge = 15 v i c = 30 a rg = 10 t j = 150 c 2.4 2 1.6 1.2 0.8 0.4 0 figure 16. switching time vs. v ce v ce , collector ? emitter voltage (v) 1 10 100 1000 switching time (ns) t f t d(off) v ge = 15 v i c = 30 a rg = 10 t j = 150 c 725 675 625 575 525 475 425 375 775 figure 17. safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 0.01 0.1 1 10 100 1000 figure 18. reverse bias safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 1 10 100 1000 i c , collector current (a) i c , collector current (a) v ge = 15 v, t c = 125 c 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature
NGTB30N120IHSWG http://onsemi.com 6 typical characteristics 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse time (sec) r(t) ( c/w) figure 20. diode transient thermal impedance pulse time (sec) r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% 1% single pulse 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.65 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r jc = 2.0 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.48e ? 4 0.002 0.03 0.1 2.0 r i ( c/w) 0.25813 0.57713 0.67147 0.38693 0.1057 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 1.76e ? 4 0.002 0.1 2.0 r i ( c/w) 0.02659 0.06231 0.10246 0.2121 0.1057 figure 21. test circuit for switching characteristics
NGTB30N120IHSWG http://onsemi.com 7 figure 22. definition of turn off waveform
NGTB30N120IHSWG http://onsemi.com 8 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb30n120ihl/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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